SIA477EDJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 12V 12A PPAK SC70-6
$0.53
Available to order
Reference Price (USD)
3,000+
$0.19855
6,000+
$0.18645
15,000+
$0.17435
30,000+
$0.16588
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover SIA477EDJ-T1-GE3, a versatile Transistors - FETs, MOSFETs - Single solution from Vishay Siliconix, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 8 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6
- Package / Case: PowerPAK® SC-70-6
Related Products
Microchip Technology
APT5010B2VRG
Toshiba Semiconductor and Storage
SSM6K517NU,LF
NXP USA Inc.
BUK952R3-40E,127
Fairchild Semiconductor
SFW9530TM
STMicroelectronics
STW26N65DM2
Taiwan Semiconductor Corporation
TSM080N03PQ56 RLG
Fairchild Semiconductor
HUF75321D3S
Infineon Technologies
SPP04N60C3XKSA1
Renesas Electronics America Inc
UPA2734GR-E1-AT
onsemi