SIHH14N65E-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 650V 15A PPAK 8 X 8
$5.52
Available to order
Reference Price (USD)
3,000+
$2.76946
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SIHH14N65E-T1-GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SIHH14N65E-T1-GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1712 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: 8-PowerTDFN
Related Products
Infineon Technologies
IPS65R1K0CEAKMA2
onsemi
NTMS4N01R2G
Vishay Siliconix
SIA477EDJ-T1-GE3
Microchip Technology
APT5010B2VRG
Toshiba Semiconductor and Storage
SSM6K517NU,LF
NXP USA Inc.
BUK952R3-40E,127
Fairchild Semiconductor
SFW9530TM
STMicroelectronics
STW26N65DM2
Taiwan Semiconductor Corporation
TSM080N03PQ56 RLG
Fairchild Semiconductor