BUK952R3-40E,127
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 40V 120A TO220AB
$0.93
Available to order
Reference Price (USD)
1+
$0.93000
500+
$0.9207
1000+
$0.9114
1500+
$0.9021
2000+
$0.8928
2500+
$0.8835
Exquisite packaging
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Enhance your circuit performance with BUK952R3-40E,127, a premium Transistors - FETs, MOSFETs - Single from NXP USA Inc.. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust BUK952R3-40E,127 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 87.8 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 13160 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 293W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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