NGTB20N135IHRWG
onsemi
onsemi
IGBT TRENCH/FS 1350V 40A TO247
$4.85
Available to order
Reference Price (USD)
1+
$5.09000
30+
$4.32333
120+
$3.74692
510+
$3.18969
1,020+
$2.69010
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance NGTB20N135IHRWG Single IGBTs from onsemi, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, NGTB20N135IHRWG ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 20A
- Power - Max: 394 W
- Switching Energy: 600µJ (off)
- Input Type: Standard
- Gate Charge: 234 nC
- Td (on/off) @ 25°C: -/245ns
- Test Condition: 600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
Related Products
IXYS
IXYT25N250CHV
Infineon Technologies
IKD06N60RC2ATMA1
STMicroelectronics
STGB30NC60WT4
Toshiba Semiconductor and Storage
GT20N135SRA,S1E
Renesas Electronics America Inc
RJP30H1DPP-MZ#T2
onsemi
HGTG40N60A4
IXYS
IXXH80N65B4
Infineon Technologies
SKB02N60
onsemi
FGD3040G2-F085V
Infineon Technologies