IXXH80N65B4
IXYS
IXYS
IGBT 650V 160A 625W TO247AD
$8.66
Available to order
Reference Price (USD)
1+
$6.77000
10+
$6.09500
30+
$5.55333
120+
$5.01167
270+
$4.60530
510+
$4.19894
1,020+
$3.65715
2,520+
$3.61200
Exquisite packaging
Discount
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Optimize power control with IXXH80N65B4 Single IGBTs from IXYS, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. IXYS ensures IXXH80N65B4 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 160 A
- Current - Collector Pulsed (Icm): 430 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
- Power - Max: 625 W
- Switching Energy: 3.77mJ (on), 1.2mJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 38ns/120ns
- Test Condition: 400V, 80A, 3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXXH)
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