IKD06N60RC2ATMA1
Infineon Technologies
Infineon Technologies
IKD06N60RC2ATMA1
$1.19
Available to order
Reference Price (USD)
1+
$1.19000
500+
$1.1781
1000+
$1.1662
1500+
$1.1543
2000+
$1.1424
2500+
$1.1305
Exquisite packaging
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The IKD06N60RC2ATMA1 Single IGBT from Infineon Technologies delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Infineon Technologies's commitment to innovation ensures IKD06N60RC2ATMA1 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 11.7 A
- Current - Collector Pulsed (Icm): 18 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
- Power - Max: 51.7 W
- Switching Energy: 170µJ (on), 80µJ (off)
- Input Type: Standard
- Gate Charge: 31 nC
- Td (on/off) @ 25°C: 6ns/129ns
- Test Condition: 400V, 6A, 49Ohm, 15V
- Reverse Recovery Time (trr): 98 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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