GT20N135SRA,S1E
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
D-IGBT TO-247 VCES=1350V IC=40A
$3.37
Available to order
Reference Price (USD)
1+
$3.37000
500+
$3.3363
1000+
$3.3026
1500+
$3.2689
2000+
$3.2352
2500+
$3.2015
Exquisite packaging
Discount
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The GT20N135SRA,S1E Single IGBT by Toshiba Semiconductor and Storage sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Toshiba Semiconductor and Storage for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 312 W
- Switching Energy: -, 700µJ (off)
- Input Type: Standard
- Gate Charge: 185 nC
- Td (on/off) @ 25°C: -
- Test Condition: 300V, 40A, 39Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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