IPW80R360P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 13A TO247-3
$4.09
Available to order
Reference Price (USD)
1+
$3.30000
10+
$2.97200
240+
$2.47188
720+
$2.03817
1,200+
$1.74903
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IPW80R360P7XKSA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPW80R360P7XKSA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 84W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
Related Products
IXYS
IXTA300N04T2
PN Junction Semiconductor
P3M171K0T3
Infineon Technologies
BSC360N15NS3GATMA1
Vishay Siliconix
IRFBF20STRRPBF
Infineon Technologies
IPB720P15LMATMA1
Diodes Incorporated
ZXMP7A17GTA
Diodes Incorporated
ZVP4525GTA
Infineon Technologies
IPS70R600P7SAKMA1
Infineon Technologies
IRF630NPBF
Toshiba Semiconductor and Storage