IPB720P15LMATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TO263-3
$6.53
Available to order
Reference Price (USD)
1+
$6.53000
500+
$6.4647
1000+
$6.3994
1500+
$6.3341
2000+
$6.2688
2500+
$6.2035
Exquisite packaging
Discount
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Upgrade your electronic designs with IPB720P15LMATMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IPB720P15LMATMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 72mOhm @ 37A, 10V
- Vgs(th) (Max) @ Id: 2V @ 5.55mA
- Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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