ZVP4525GTA
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 250V 265MA SOT223
$0.76
Available to order
Reference Price (USD)
1,000+
$0.30800
2,000+
$0.27913
5,000+
$0.25988
10,000+
$0.25025
25,000+
$0.24500
Exquisite packaging
Discount
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ZVP4525GTA by Diodes Incorporated is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, ZVP4525GTA ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
- Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.45 nC @ 10 V
- Vgs (Max): ±40V
- Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-3
- Package / Case: TO-261-4, TO-261AA
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