SSM3J114TU(TE85L)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 1.8A UFM
$0.44
Available to order
Reference Price (USD)
1+
$0.44000
500+
$0.4356
1000+
$0.4312
1500+
$0.4268
2000+
$0.4224
2500+
$0.418
Exquisite packaging
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Toshiba Semiconductor and Storage presents SSM3J114TU(TE85L), a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SSM3J114TU(TE85L) delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Rds On (Max) @ Id, Vgs: 149mOhm @ 600mA, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Leads
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