IPS70R600P7SAKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 700V 8.5A TO251-3
$1.08
Available to order
Reference Price (USD)
1+
$0.99000
10+
$0.87000
100+
$0.68000
500+
$0.51432
1,000+
$0.41964
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IPS70R600P7SAKMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPS70R600P7SAKMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 43W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Infineon Technologies
IRF630NPBF
Toshiba Semiconductor and Storage
SSM3J114TU(TE85L)
Alpha & Omega Semiconductor Inc.
AOD7N65
onsemi
MCH6437-TL-E
Rectron USA
RM2A8N60S4
Infineon Technologies
SPP02N60S5
Diodes Incorporated
DMT10H025LSS-13
Vishay Siliconix
IRL530PBF
Toshiba Semiconductor and Storage
TK9A65W,S5X
Infineon Technologies