IPN60R360P7SATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CHANNEL 600V 9A SOT223
$1.32
Available to order
Reference Price (USD)
3,000+
$0.47090
6,000+
$0.44995
15,000+
$0.43498
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPN60R360P7SATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPN60R360P7SATMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 7W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223
- Package / Case: TO-261-4, TO-261AA
Related Products
Infineon Technologies
IPW80R360P7XKSA1
IXYS
IXTA300N04T2
PN Junction Semiconductor
P3M171K0T3
Infineon Technologies
BSC360N15NS3GATMA1
Vishay Siliconix
IRFBF20STRRPBF
Infineon Technologies
IPB720P15LMATMA1
Diodes Incorporated
ZXMP7A17GTA
Diodes Incorporated
ZVP4525GTA
Infineon Technologies
IPS70R600P7SAKMA1
Infineon Technologies