HGTA32N60E2
Harris Corporation
Harris Corporation
32A, 600V N-CHANNEL IGBT
$10.60
Available to order
Reference Price (USD)
1+
$10.60000
500+
$10.494
1000+
$10.388
1500+
$10.282
2000+
$10.176
2500+
$10.07
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power electronics with HGTA32N60E2 Single IGBTs by Harris Corporation, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust Harris Corporation for top-quality components that meet global standards. Request a quote now to learn more about how HGTA32N60E2 can enhance your projects.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
- Power - Max: 208 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 265 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-218-5
- Supplier Device Package: TO-218-5
Related Products
Infineon Technologies
F3L300R12MT4_B22
Harris Corporation
HGT1S15N120C3S
IXYS
IXG70IF1200NA
Harris Corporation
HGTP10N40F1D
onsemi
NGTD13T65F2WP
Infineon Technologies
F3L300R12ME4_B22
onsemi
NGB8204ANT4G
Rohm Semiconductor
RGW00TS65EHRC11
IXYS
IXYH30N120B4
Harris Corporation