HGTG20N100D2
Harris Corporation
Harris Corporation
34A, 1200V, N-CHANNEL IGBT
$8.56
Available to order
Reference Price (USD)
1+
$8.56000
500+
$8.4744
1000+
$8.3888
1500+
$8.3032
2000+
$8.2176
2500+
$8.132
Exquisite packaging
Discount
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Choose HGTG20N100D2 Single IGBTs by Harris Corporation for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Harris Corporation's reputation for quality makes HGTG20N100D2 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 34 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 4.1V @ 10V, 20A
- Power - Max: 150 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 163 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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