R6524ENXC7G
Rohm Semiconductor
Rohm Semiconductor
650V 24A TO-220FM, LOW-NOISE POW
$5.85
Available to order
Reference Price (USD)
1+
$5.85000
500+
$5.7915
1000+
$5.733
1500+
$5.6745
2000+
$5.616
2500+
$5.5575
Exquisite packaging
Discount
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Optimize your electronic systems with R6524ENXC7G, a high-quality Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, R6524ENXC7G provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 750µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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