Shopping cart

Subtotal: $0.00

PXP8R3-20QXJ

Nexperia USA Inc.
PXP8R3-20QXJ Preview
Nexperia USA Inc.
PXP8R3-20QX/SOT8002/MLPAK33
$0.72
Available to order
Reference Price (USD)
1+
$0.72000
500+
$0.7128
1000+
$0.7056
1500+
$0.6984
2000+
$0.6912
2500+
$0.684
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 65.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 8.3mOhm @ 12.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 91.8 nC @ 4.5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MLPAK33
  • Package / Case: 8-PowerVDFN

Related Products

Diodes Incorporated

DMT10H9M9LK3-13

Renesas Electronics America Inc

UPA1556AH(7)-AZ

Diodes Incorporated

DMP1007UCB9-7

Renesas Electronics America Inc

FS14KM-10A#B00

Diodes Incorporated

DMP6023LFGQ-13

STMicroelectronics

STO65N60DM6

Diodes Incorporated

DMN2053UWQ-7

Renesas Electronics America Inc

2SK2595AXTB-E

Toshiba Semiconductor and Storage

TK3A90E,S4X

Top