DMN2310UW-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT323 T&R
$0.05
Available to order
Reference Price (USD)
1+
$0.05161
500+
$0.0510939
1000+
$0.0505778
1500+
$0.0500617
2000+
$0.0495456
2500+
$0.0490295
Exquisite packaging
Discount
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Boost your electronic applications with DMN2310UW-7, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMN2310UW-7 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 450mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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