NP82N10PUF-E1-AY
Renesas
Renesas
NP82N10PUF-E1-AY - MOS FIELD EFF
$2.30
Available to order
Reference Price (USD)
1+
$2.29838
500+
$2.2753962
1000+
$2.2524124
1500+
$2.2294286
2000+
$2.2064448
2500+
$2.183461
Exquisite packaging
Discount
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NP82N10PUF-E1-AY by Renesas is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, NP82N10PUF-E1-AY ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5.8V, 10V
- Rds On (Max) @ Id, Vgs: 15mOhm @ 41A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 150W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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