DMT69M5LCG-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V V-DFN3333
$0.30
Available to order
Reference Price (USD)
1+
$0.29970
500+
$0.296703
1000+
$0.293706
1500+
$0.290709
2000+
$0.287712
2500+
$0.284715
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with DMT69M5LCG-13 by Diodes Incorporated, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, DMT69M5LCG-13 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.37W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: V-DFN3333-8 (Type B)
- Package / Case: 8-PowerVDFN
Related Products
Diodes Incorporated
DMP1011LFVQ-7
Renesas
NP82N10PUF-E1-AY
Infineon Technologies
IPB35N12S3L26ATMA1
Toshiba Semiconductor and Storage
SSM3J16FU(TE85L,F)
Goford Semiconductor
G06N06S
Renesas Electronics America Inc
RJJ0621DPP-00#T2
Diodes Incorporated
DMN10H170SFGQ-7
onsemi
STY30N50E
Infineon Technologies
IPA600N25NM3SXKSA1
Rohm Semiconductor