DMP1011LFVQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V POWERDI3333
$0.22
Available to order
Reference Price (USD)
1+
$0.22268
500+
$0.2204532
1000+
$0.2182264
1500+
$0.2159996
2000+
$0.2137728
2500+
$0.211546
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with DMP1011LFVQ-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust DMP1011LFVQ-7 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 11.7mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 6 V
- Vgs (Max): -6V
- Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 1.05W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
Related Products
Renesas
NP82N10PUF-E1-AY
Infineon Technologies
IPB35N12S3L26ATMA1
Toshiba Semiconductor and Storage
SSM3J16FU(TE85L,F)
Goford Semiconductor
G06N06S
Renesas Electronics America Inc
RJJ0621DPP-00#T2
Diodes Incorporated
DMN10H170SFGQ-7
onsemi
STY30N50E
Infineon Technologies
IPA600N25NM3SXKSA1
Rohm Semiconductor
R6009KNXC7G
EPC