IPB35N12S3L26ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CHANNEL_100+
$0.63
Available to order
Reference Price (USD)
1,000+
$0.61215
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IPB35N12S3L26ATMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPB35N12S3L26ATMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Toshiba Semiconductor and Storage
SSM3J16FU(TE85L,F)
Goford Semiconductor
G06N06S
Renesas Electronics America Inc
RJJ0621DPP-00#T2
Diodes Incorporated
DMN10H170SFGQ-7
onsemi
STY30N50E
Infineon Technologies
IPA600N25NM3SXKSA1
Rohm Semiconductor
R6009KNXC7G
EPC
EPC2218A
Renesas Electronics America Inc
2SK1283(1)-AZ
onsemi