APT50GT120B2RDLG
Microsemi Corporation
Microsemi Corporation
IGBT 1200V 106A 694W TO-247
$18.81
Available to order
Reference Price (USD)
1+
$19.91000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize energy efficiency with APT50GT120B2RDLG Single IGBTs by Microsemi Corporation, a trusted name in discrete semiconductors. Suitable for solar inverters, motor controllers, and more, these transistors feature low conduction loss and high switching frequency. Their robust design ensures long-term performance even in harsh environments. Choose APT50GT120B2RDLG for your next project and experience the Microsemi Corporation difference. Submit your inquiry today for expert assistance!
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 106 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
- Power - Max: 694 W
- Switching Energy: 3585µJ (on), 1910µJ (off)
- Input Type: Standard
- Gate Charge: 240 nC
- Td (on/off) @ 25°C: 23ns/215ns
- Test Condition: 800V, 50A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: -
Related Products
Fairchild Semiconductor
FGPF70N33BTTU
Rohm Semiconductor
RGCL60TS60GC13
Alpha & Omega Semiconductor Inc.
AOK50B65M2
STMicroelectronics
STGD5H60DF
Infineon Technologies
IGD15N65T6ARMA1
onsemi
FGH60N60SMD-F085
STMicroelectronics
STGFW80V60F
Infineon Technologies
AIGW40N65H5XKSA1
Rohm Semiconductor
RGTH50TK65GC11
Renesas Electronics America Inc