IGD15N65T6ARMA1
Infineon Technologies
Infineon Technologies
IGD15N65T6ARMA1
$1.77
Available to order
Reference Price (USD)
1+
$1.77000
500+
$1.7523
1000+
$1.7346
1500+
$1.7169
2000+
$1.6992
2500+
$1.6815
Exquisite packaging
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Choose IGD15N65T6ARMA1 Single IGBTs by Infineon Technologies for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Infineon Technologies's reputation for quality makes IGD15N65T6ARMA1 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 57.5 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
- Power - Max: 100 W
- Switching Energy: 230µJ (on), 110µJ (off)
- Input Type: Standard
- Gate Charge: 37 nC
- Td (on/off) @ 25°C: 30ns/117ns
- Test Condition: 400V, 11.5A, 47Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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