YJG50N03A-F1-0100HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 30V 50A PDFN5060-8L-
$0.67
Available to order
Reference Price (USD)
1+
$0.67000
500+
$0.6633
1000+
$0.6566
1500+
$0.6499
2000+
$0.6432
2500+
$0.6365
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of YJG50N03A-F1-0100HF, a premium Transistors - FETs, MOSFETs - Single from Yangzhou Yangjie Electronic Technology Co.,Ltd. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, YJG50N03A-F1-0100HF is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5x6)
- Package / Case: 8-PowerLDFN
Related Products
STMicroelectronics
STW40N95K5
onsemi
NTQS6463R2
Toshiba Semiconductor and Storage
SSM6J507NU,LF
Infineon Technologies
IRLR3110ZTRRPBF
STMicroelectronics
SCTW100N65G2AG
Vishay Siliconix
IRFI634GPBF
Infineon Technologies
IPB050N06NGATMA1
Fairchild Semiconductor
FQPF3N80CYDTU
Rohm Semiconductor
R8001CND3FRATL
onsemi