SCTW100N65G2AG
STMicroelectronics
STMicroelectronics
SICFET N-CH 650V 100A HIP247
$39.56
Available to order
Reference Price (USD)
1+
$39.56000
500+
$39.1644
1000+
$38.7688
1500+
$38.3732
2000+
$37.9776
2500+
$37.582
Exquisite packaging
Discount
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Enhance your circuit performance with SCTW100N65G2AG, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SCTW100N65G2AG for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V
- FET Feature: -
- Power Dissipation (Max): 420W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
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