R8001CND3FRATL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 800V 1A TO252
$2.56
Available to order
Reference Price (USD)
1+
$2.56000
500+
$2.5344
1000+
$2.5088
1500+
$2.4832
2000+
$2.4576
2500+
$2.432
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Rohm Semiconductor presents R8001CND3FRATL, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, R8001CND3FRATL delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
NTTFS4932NTAG
Vishay Siliconix
SI7117DN-T1-E3
Vishay Siliconix
SQD50P08-28_GE3
NTE Electronics, Inc
NTE2931
Nexperia USA Inc.
NX5008NBKHH
onsemi
NTR4501NST1G
Rohm Semiconductor
RQ5L030SNTL
Microchip Technology
DN3545N3-G
IXYS
IXFR80N50Q3
Vishay Siliconix