IPB050N06NGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 100A D2PAK
$1.24
Available to order
Reference Price (USD)
1+
$1.24000
500+
$1.2276
1000+
$1.2152
1500+
$1.2028
2000+
$1.1904
2500+
$1.178
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IPB050N06NGATMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPB050N06NGATMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.7mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Fairchild Semiconductor
FQPF3N80CYDTU
Rohm Semiconductor
R8001CND3FRATL
onsemi
NTTFS4932NTAG
Vishay Siliconix
SI7117DN-T1-E3
Vishay Siliconix
SQD50P08-28_GE3
NTE Electronics, Inc
NTE2931
Nexperia USA Inc.
NX5008NBKHH
onsemi
NTR4501NST1G
Rohm Semiconductor
RQ5L030SNTL
Microchip Technology