VS-GT300TD60S
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 580A INT-A-PAK
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The VS-GT300TD60S from Vishay General Semiconductor - Diodes Division sets the standard in IGBT Modules with its compact design and high power density. Ideal for servo drives and plasma cutting, it combines fast switching with low conduction losses. Partner with Vishay General Semiconductor - Diodes Division for top-tier semiconductor solutions. Get in touch for details!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 466 A
- Power - Max: 882 W
- Vce(on) (Max) @ Vge, Ic: 1.47V @ 15V, 300A
- Current - Collector Cutoff (Max): 200 µA
- Input Capacitance (Cies) @ Vce: 24.2 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: INT-A-PAK
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