VS-ENQ030L120S
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 61A EMIPAK-1B
$0.00
Available to order
Reference Price (USD)
1+
$117.94000
10+
$112.36300
25+
$109.97280
Exquisite packaging
Discount
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Maximize efficiency in your power electronics with the VS-ENQ030L120S IGBT Module by Vishay General Semiconductor - Diodes Division. Perfect for elevators and conveyor systems, it features low switching losses and high noise immunity. Vishay General Semiconductor - Diodes Division leads in innovation contact us for expert support and competitive pricing.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Configuration: Three Level Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 61 A
- Power - Max: 216 W
- Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 30A
- Current - Collector Cutoff (Max): 230 µA
- Input Capacitance (Cies) @ Vce: 3.34 nF @ 30 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: EMIPAK-1B
- Supplier Device Package: EMIPAK-1B
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