UPA2680T1E-E2-AT
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 20V 3A 6MLP
$0.55
Available to order
Reference Price (USD)
1+
$0.55000
500+
$0.5445
1000+
$0.539
1500+
$0.5335
2000+
$0.528
2500+
$0.5225
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with UPA2680T1E-E2-AT, a reliable Transistors - FETs, MOSFETs - Single by Renesas Electronics America Inc. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, UPA2680T1E-E2-AT meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MLP (3x3)
- Package / Case: 6-VDFN Exposed Pad
Related Products
Toshiba Semiconductor and Storage
TK14V65W,LQ
Vishay Siliconix
SIJ150DP-T1-GE3
onsemi
NVMFS025P04M8LT1G
Renesas Electronics America Inc
RJK0395DPA-WS#J53
Renesas
2SK2498-AZ
Harris Corporation
RF1S640SM
Diodes Incorporated
DMT3003LFG-7
Toshiba Semiconductor and Storage
TK110E65Z,S1X
onsemi
NVMYS013N08LHTWG
Diodes Incorporated