NVMYS013N08LHTWG
onsemi
onsemi
T8 80V LL LFPAK
$0.84
Available to order
Reference Price (USD)
1+
$0.83605
500+
$0.8276895
1000+
$0.819329
1500+
$0.8109685
2000+
$0.802608
2500+
$0.7942475
Exquisite packaging
Discount
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Experience the power of NVMYS013N08LHTWG, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, NVMYS013N08LHTWG is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2V @ 45µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
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