SIJ150DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 45V 30.9A/110A PPAK
$1.32
Available to order
Reference Price (USD)
1+
$1.32000
500+
$1.3068
1000+
$1.2936
1500+
$1.2804
2000+
$1.2672
2500+
$1.254
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SIJ150DP-T1-GE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SIJ150DP-T1-GE3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.83mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
onsemi
NVMFS025P04M8LT1G
Renesas Electronics America Inc
RJK0395DPA-WS#J53
Renesas
2SK2498-AZ
Harris Corporation
RF1S640SM
Diodes Incorporated
DMT3003LFG-7
Toshiba Semiconductor and Storage
TK110E65Z,S1X
onsemi
NVMYS013N08LHTWG
Diodes Incorporated
DMTH10H025LPSQ-13
Infineon Technologies
IPA65R420CFDXKSA2
onsemi