DMTH10H025LPSQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V PWRDI5060
$0.42
Available to order
Reference Price (USD)
1+
$0.41950
500+
$0.415305
1000+
$0.41111
1500+
$0.406915
2000+
$0.40272
2500+
$0.398525
Exquisite packaging
Discount
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Boost your electronic applications with DMTH10H025LPSQ-13, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMTH10H025LPSQ-13 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1477 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 79W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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