TPW2R508NH,L1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F POWER MOSFET TRANSISTOR DOS
$1.24
Available to order
Reference Price (USD)
1+
$1.23750
500+
$1.225125
1000+
$1.21275
1500+
$1.200375
2000+
$1.188
2500+
$1.175625
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Toshiba Semiconductor and Storage presents TPW2R508NH,L1Q, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, TPW2R508NH,L1Q delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
onsemi
NTTFS030N10GTAG
Diodes Incorporated
DMT10H9M9LCT
Infineon Technologies
IPP04CN10NGXKSA1
UnitedSiC
UF3C065080K3S
Diodes Incorporated
DMTH8008SPS-13
Panjit International Inc.
PJQ1916_R1_00001
onsemi
NTPF165N65S3H
Infineon Technologies
IAUC60N10S5L110ATMA1
EPC
EPC2306ENGRT
onsemi