IAUC60N10S5L110ATMA1
Infineon Technologies
Infineon Technologies
MOSFET_(75V 120V( PG-TDSON-8
$0.84
Available to order
Reference Price (USD)
1+
$0.83660
500+
$0.828234
1000+
$0.819868
1500+
$0.811502
2000+
$0.803136
2500+
$0.79477
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IAUC60N10S5L110ATMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IAUC60N10S5L110ATMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-33
- Package / Case: 8-PowerTDFN
Related Products
EPC
EPC2306ENGRT
onsemi
NTMFS08N004C
Renesas Electronics America Inc
RJK0658DPA-00#J5A
IXYS
IXTH2N150
Renesas Electronics America Inc
2SK973L-E
Diodes Incorporated
DMT6005LPS-13
Renesas Electronics America Inc
2SJ216-E
onsemi
NVHL065N65S3F
onsemi
NTMTS002N08MC
Renesas Electronics America Inc