EPC2306ENGRT
EPC
EPC
TRANS GAN 100V .0038OHM3X5MM QFN
$5.83
Available to order
Reference Price (USD)
1+
$5.83000
500+
$5.7717
1000+
$5.7134
1500+
$5.6551
2000+
$5.5968
2500+
$5.5385
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose EPC2306ENGRT by EPC. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with EPC2306ENGRT inquire now for more details!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
onsemi
NTMFS08N004C
Renesas Electronics America Inc
RJK0658DPA-00#J5A
IXYS
IXTH2N150
Renesas Electronics America Inc
2SK973L-E
Diodes Incorporated
DMT6005LPS-13
Renesas Electronics America Inc
2SJ216-E
onsemi
NVHL065N65S3F
onsemi
NTMTS002N08MC
Renesas Electronics America Inc
2SK3114-S17-AZ
IXYS