DMT10H9M9LCT
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V TO220AB T
$1.23
Available to order
Reference Price (USD)
1+
$1.23320
500+
$1.220868
1000+
$1.208536
1500+
$1.196204
2000+
$1.183872
2500+
$1.17154
Exquisite packaging
Discount
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Boost your electronic applications with DMT10H9M9LCT, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMT10H9M9LCT meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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