TPN2010FNH,L1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 250V 5.6A 8TSON
$1.65
Available to order
Reference Price (USD)
5,000+
$0.63700
Exquisite packaging
Discount
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Optimize your electronic systems with TPN2010FNH,L1Q, a high-quality Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, TPN2010FNH,L1Q provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 39W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.1x3.1)
- Package / Case: 8-PowerVDFN
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