IPP045N10N3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 100A TO220-3
$3.52
Available to order
Reference Price (USD)
1+
$3.10000
10+
$2.82100
100+
$2.29860
500+
$1.82420
1,000+
$1.53957
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IPP045N10N3GXKSA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IPP045N10N3GXKSA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IRF200B211
Vishay Siliconix
IRFP360LCPBF
Microchip Technology
APT30F50S
PN Junction Semiconductor
P3M12080G7
onsemi
NTD4906N-1G
Renesas Electronics America Inc
2SK3287ANTL-E
Vishay Siliconix
IRFL210TRPBF-BE3
Infineon Technologies
IRFH7085TRPBF
onsemi
FQB19N20LTM
Diodes Incorporated