P3M12080G7
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 1200V 32A TO-263-7
$11.90
Available to order
Reference Price (USD)
1+
$11.90000
500+
$11.781
1000+
$11.662
1500+
$11.543
2000+
$11.424
2500+
$11.305
Exquisite packaging
Discount
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Optimize your electronic systems with P3M12080G7, a high-quality Transistors - FETs, MOSFETs - Single from PN Junction Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, P3M12080G7 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 32A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 96mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 30mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 136W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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