NVMFS6H836NWFT1G
onsemi
onsemi
MOSFET N-CH 80V 15A/74A 5DFN
$0.73
Available to order
Reference Price (USD)
1+
$0.72633
500+
$0.7190667
1000+
$0.7118034
1500+
$0.7045401
2000+
$0.6972768
2500+
$0.6900135
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NVMFS6H836NWFT1G by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NVMFS6H836NWFT1G inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 95µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
Related Products
Toshiba Semiconductor and Storage
TK6P65W,RQ
Panjit International Inc.
PJP3NA50_T0_00001
Fairchild Semiconductor
HUF76437S3ST
Infineon Technologies
SPD30N03S2L-20G
Infineon Technologies
IPP045N10N3GXKSA1
Infineon Technologies
IRF200B211
Vishay Siliconix
IRFP360LCPBF
Microchip Technology
APT30F50S
PN Junction Semiconductor
P3M12080G7
onsemi