TPH4R803PL,LQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 48A 8SOP
$0.74
Available to order
Reference Price (USD)
1+
$0.74000
500+
$0.7326
1000+
$0.7252
1500+
$0.7178
2000+
$0.7104
2500+
$0.703
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Toshiba Semiconductor and Storage presents TPH4R803PL,LQ, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, TPH4R803PL,LQ delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 830mW (Ta), 69W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
Related Products
Infineon Technologies
IPP65R190C6XKSA1
Microchip Technology
APT6021SFLLG
IXYS
IXFP30N60X
Vishay Siliconix
SIHH14N60E-T1-GE3
Diodes Incorporated
ZXMN2B03E6TA
onsemi
FQU4N50TU-WS
Fairchild Semiconductor
FQPF13N50CSDTU
Infineon Technologies
IRFB4310ZPBF
onsemi
NTP90N02
Taiwan Semiconductor Corporation