FQU4N50TU-WS
onsemi
onsemi
MOSFET N-CH 500V 2.6A IPAK
$0.96
Available to order
Reference Price (USD)
1+
$1.04000
10+
$0.92500
100+
$0.73610
500+
$0.57616
1,000+
$0.45989
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with FQU4N50TU-WS, a premium Transistors - FETs, MOSFETs - Single from onsemi. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust FQU4N50TU-WS for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Fairchild Semiconductor
FQPF13N50CSDTU
Infineon Technologies
IRFB4310ZPBF
onsemi
NTP90N02
Taiwan Semiconductor Corporation
TSM043NH04CR RLG
Vishay Siliconix
SQJ460AEP-T1_GE3
STMicroelectronics
STD25NF10LA
Vishay Siliconix
SIHF520STRR-GE3
Rohm Semiconductor
RF4C100BCTCR
IXYS
IXFR44N50Q
Infineon Technologies