Shopping cart

Subtotal: $0.00

IXFP30N60X

IXYS
IXFP30N60X Preview
IXYS
MOSFET N-CH 600V 30A TO220
$4.89
Available to order
Reference Price (USD)
50+
$4.23000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3

Related Products

Vishay Siliconix

SIHH14N60E-T1-GE3

Diodes Incorporated

ZXMN2B03E6TA

Fairchild Semiconductor

FQPF13N50CSDTU

Infineon Technologies

IRFB4310ZPBF

Taiwan Semiconductor Corporation

TSM043NH04CR RLG

Vishay Siliconix

SQJ460AEP-T1_GE3

STMicroelectronics

STD25NF10LA

Vishay Siliconix

SIHF520STRR-GE3

Top