IPP65R190C6XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 20.2A TO220-3
$1.67
Available to order
Reference Price (USD)
500+
$2.07544
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IPP65R190C6XKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IPP65R190C6XKSA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 730µA
- Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 151W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Microchip Technology
APT6021SFLLG
IXYS
IXFP30N60X
Vishay Siliconix
SIHH14N60E-T1-GE3
Diodes Incorporated
ZXMN2B03E6TA
onsemi
FQU4N50TU-WS
Fairchild Semiconductor
FQPF13N50CSDTU
Infineon Technologies
IRFB4310ZPBF
onsemi
NTP90N02
Taiwan Semiconductor Corporation
TSM043NH04CR RLG
Vishay Siliconix