TP65H035G4WSQA
Transphorm
Transphorm
650 V 46.5 GAN FET
$21.04
Available to order
Reference Price (USD)
1+
$21.04000
500+
$20.8296
1000+
$20.6192
1500+
$20.4088
2000+
$20.1984
2500+
$19.988
Exquisite packaging
Discount
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Experience the power of TP65H035G4WSQA, a premium Transistors - FETs, MOSFETs - Single from Transphorm. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, TP65H035G4WSQA is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 187W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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