TK65A10N1,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 65A TO220SIS
$2.93
Available to order
Reference Price (USD)
1+
$2.80000
50+
$2.25500
100+
$2.02950
500+
$1.57850
1,000+
$1.30790
2,500+
$1.26280
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover TK65A10N1,S4X, a versatile Transistors - FETs, MOSFETs - Single solution from Toshiba Semiconductor and Storage, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
GeneSiC Semiconductor
G3R45MT17D
Microchip Technology
APT6021BLLG
onsemi
2SK4065-DL-1EX
IXYS
IXTH30N50P
Taiwan Semiconductor Corporation
TSM085P03CS RLG
NXP USA Inc.
BUK754R0-55B,127
Vishay Siliconix
IRFP21N60LPBF
IXYS
IXFR24N100Q3
Infineon Technologies
BSS670S2LH6433XTMA1
Rectron USA