IXTH30N50P
IXYS
IXYS
MOSFET N-CH 500V 30A TO247
$9.11
Available to order
Reference Price (USD)
30+
$5.12500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXTH30N50P by IXYS is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IXTH30N50P ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 460W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
Taiwan Semiconductor Corporation
TSM085P03CS RLG
NXP USA Inc.
BUK754R0-55B,127
Vishay Siliconix
IRFP21N60LPBF
IXYS
IXFR24N100Q3
Infineon Technologies
BSS670S2LH6433XTMA1
Rectron USA
RM50N30DN
Vishay Siliconix
SIJ188DP-T1-GE3
Vishay Siliconix
IRFP31N50LPBF
STMicroelectronics
STD6NF10T4
Texas Instruments