G3R45MT17D
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 61A TO247-3
$34.69
Available to order
Reference Price (USD)
1+
$34.69000
500+
$34.3431
1000+
$33.9962
1500+
$33.6493
2000+
$33.3024
2500+
$32.9555
Exquisite packaging
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Discover high-performance G3R45MT17D from GeneSiC Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, G3R45MT17D delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V
- Vgs(th) (Max) @ Id: 2.7V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 438W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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